Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III–V photonics platform on silicon using a laboratory X-ray diffraction setup

Ping Wang, Y.; Letoublon, A.; Nguyen Thanh, T.; Bahri, M.; Largeau, L.; Patriarche, G.; Cornet, C.; Bertru, N.; Le Corre, A.; Durand, O.

doi:10.1107/S1600576715009954

Journal of Applied Crystallography Journal of Applied
Crystallography

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Figure 1
Geometrical sketch of nominal GaP and MT plane inclination in a thin film of GaP. The nominal GaP {111} planes are inclined by 54.7° from the (001) plane, while MT formation creates additional (111)-type planes inclined by 15.9°.

JOURNAL OF
APPLIED
CRYSTALLOGRAPHY

ISSN: 1600-5767

Volume 48| Part 3| June 2015| Pages 702-710

https://doi.org/10.1107/S1600576715009954

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