Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III–V photonics platform on silicon using a laboratory X-ray diffraction setup

Ping Wang, Y.; Letoublon, A.; Nguyen Thanh, T.; Bahri, M.; Largeau, L.; Patriarche, G.; Cornet, C.; Bertru, N.; Le Corre, A.; Durand, O.

doi:10.1107/S1600576715009954

Journal of Applied Crystallography Journal of Applied
Crystallography

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Figure 8
WHL plots using the 002, 004 and 006 reflections for (a) S4 and (b) S5. The intercept corresponds to the mosaicity tilt, and the defect correlation length is deduced from the corresponding slope.

JOURNAL OF
APPLIED
CRYSTALLOGRAPHY

ISSN: 1600-5767

Volume 48| Part 3| June 2015| Pages 702-710

https://doi.org/10.1107/S1600576715009954

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