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Figure 1
Scanning electron micrographs of the TSV. The circular via had a diameter of 100 µm (a). The details of the inner wall surface (b) and cross section (c) document the scalloped morphology of the silicon substrate and the stack of SiO2, W and Si3N4 sublayers. The filled and open circles in (b) schematically indicate the positions of the W film scallop hill and valley at which X-ray nanodiffraction data from Fig. 3[link] were collected.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 49| Part 1| February 2016| Pages 182-187
doi:10.1107/S1600576715023419
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