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Figure 1
Schematic representation of an as-deposited SiO2/SiO2 + Ge multilayer (left; white layers correspond to SiO2 and black layers to SiO2 + Ge) and a multilayer sample after annealing at 873 K [right; showing Ge QDs (black) in the SiO2 matrix (white)].

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 49| Part 6| December 2016| Pages 1957-1966
https://doi.org/10.1107/S1600576716014175
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