Twin domain imaging in topological insulator Bi2Te3 and Bi2Se3 epitaxial thin films by scanning X-ray nanobeam microscopy and electron backscatter diffraction

Kriegner, D.; Harcuba, P.; Veselý, J.; Lesnik, A.; Bauer, G.; Springholz, G.; Holý, V.

doi:10.1107/S1600576717000565

Journal of Applied Crystallography Journal of Applied
Crystallography

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Figure 8
SXRM images and EBSD maps of three Bi₂Se₃ samples with different layer thicknesses of 25, 50 and 100 nm. The SXRM image recorded using the asymmetric ( $[1\bar{1}0.20]$ ) Bragg peak shown in (a)–(c) is compared with the in-plane angle of the crystal orientation determined from EBSD shown in (d)–(f). The measurements of the 50 nm-thick area were performed on the same location. A darker region/line in the SXRM image in panel (a) is caused by a cleavage step on the substrate surface.

JOURNAL OF
APPLIED
CRYSTALLOGRAPHY

ISSN: 1600-5767

Volume 50| Part 2| April 2017| Pages 369-377

https://doi.org/10.1107/S1600576717000565

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