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Figure 8
SXRM images and EBSD maps of three Bi2Se3 samples with different layer thicknesses of 25, 50 and 100 nm. The SXRM image recorded using the asymmetric ([1\bar{1}0.20]) Bragg peak shown in (a)–(c) is compared with the in-plane angle of the crystal orientation determined from EBSD shown in (d)–(f). The measurements of the 50 nm-thick area were performed on the same location. A darker region/line in the SXRM image in panel (a) is caused by a cleavage step on the substrate surface.

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