Twin domain imaging in topological insulator Bi2Te3 and Bi2Se3 epitaxial thin films by scanning X-ray nanobeam microscopy and electron backscatter diffraction

Kriegner, D.; Harcuba, P.; Veselý, J.; Lesnik, A.; Bauer, G.; Springholz, G.; Holý, V.

doi:10.1107/S1600576717000565

Journal of Applied Crystallography Journal of Applied
Crystallography

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Figure 9
Cross-sectional bright-field (BF) and dark-field (DF) transmission electron micrographs of Bi₂Se₃ sample BS-100 demonstrating the twin domain distribution in the film's cross section are shown in panels (a) and (b), respectively. The substrate/Bi₂Se₃ and Bi₂Se₃/Pt interfaces are indicated by white dashed lines. Diffraction contrast between the two twin orientations in BF imaging conditions is achieved by tilting the specimen to enhance the contribution of one domain (c). The DF was created using the ( $[1\bar{1}0.5]$ ) reflection where only one twin domain contributes. The limited vertical extent of a tilted twin domain is marked by a green arrow. Panel (c) shows the diffraction image of the imaging conditions with specimen orientation close to the [ $[11\bar{2}.0]$ ] zone axis. Yellow and red colours indicate the reciprocal lattices of the two twin orientations in the thin film, while cyan marks that of the substrate.

JOURNAL OF
APPLIED
CRYSTALLOGRAPHY

ISSN: 1600-5767

Volume 50| Part 2| April 2017| Pages 369-377

https://doi.org/10.1107/S1600576717000565

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