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Figure 1
SRIM depth distributions of (filled squares) primary He+ ion and (open squares) Si vacancies (VSi). Ion projected length Rp ≃ 26 nm, number of vacancies per ion approximately 30.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 50| Part 2| April 2017| Pages 539-546
https://doi.org/10.1107/S1600576717003259
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