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Figure 4
ω–2θ scans for Si(004) (coherent part of scattering) and best-fit curves (a), (c), (e) and strain ∊zz(z) and static Debye–Waller factor exp(−LH)(z) profiles (b), (d), (f): (a), (b) as-implanted, (c), (d) annealed at 853 K and (e), (f) annealed at 1073 K.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 50| Part 2| April 2017| Pages 539-546
https://doi.org/10.1107/S1600576717003259
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