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Figure 3
Mercury ion etching of variable-gap Cd1−xHgxTe/CdTe structure (x = 0.19). The accelerating voltage of the Hg ions is (I) E = 1200 V, (II) E = 2400 V and (III) E = 600 V. Crystal surface is (111), reflection is 511, Cu [{K{\alpha_{ 1,2}}}]. (a) Lext = 2.61 µm (φ = 35°); (b) Lext = 2.17 µm (φ = 25°); (c) Lext = 1.11 µm (φ = 18°); (d) Lext = 1.42 µm (φ = 20°). Numbers 1 and 2 indicate cavities of hexagonal shape, and 3 indicates hill-like inclusions of another phase above the surface.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 50| Part 3| June 2017| Pages 727-733
https://doi.org/10.1107/S1600576717007208
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