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Figure 4
Calculated symmetric scans of a thin film (15 nm) of Ge solution (10%) in Si on an Si substrate. Reflection 004. Type c of transition layer model is assumed. [|D|] is the magnitude of the amplitude of the diffracted wave (σ polarization) and [\omega_{\rm in}] is the incidence angle (with respect to the surface plane). The light-orange solid line represents the case of zero roughness. Pink, purple, cyan and black solid lines correspond to interfacial roughnesses of 2, 5, 10 and 15 nm, respectively (surface roughness is absent). These colored lines depict the exact solution. Related black dashed lines represent the approximate solution.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 50| Part 3| June 2017| Pages 681-688
https://doi.org/10.1107/S1600576717004137
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