Threefold rotational symmetry in hexagonally shaped core–shell (In,Ga)As/GaAs nanowires revealed by coherent X-ray diffraction imaging

Davtyan, A.; Krause, T.; Kriegner, D.; Al-Hassan, A.; Bahrami, D.; Mostafavi Kashani, S.M.; Lewis, R.B.; Küpers, H.; Tahraoui, A.; Geelhaar, L.; Hanke, M.; Leake, S.J.; Loffeld, O.; Pietsch, U.

doi:10.1107/S1600576717004149

Journal of Applied Crystallography Journal of Applied
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Figure 6
FEM models and corresponding simulated GaAs 111 and GaAs 333 RSMs and real-space phases for the single NW with a different percentage of InAs in each second corner of the inner shell (In,Ga)As. (a) The (In,Ga)As shell has 20% In concentration in each second corner, and the threefold symmetry in the resulting RSMs and phases is less expressed in comparison with (b)–(d), where the hexagonal symmetry of the (In,Ga)As shell breaks by increasing the In concentration from 30 to 100% at each second corner of the (In,Ga)As shell.

JOURNAL OF
APPLIED
CRYSTALLOGRAPHY

ISSN: 1600-5767

Volume 50| Part 3| June 2017| Pages 673-680

https://doi.org/10.1107/S1600576717004149

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