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![[Figure 1]](rg5143fig1mag.jpg)
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Figure 1
(a) Variation in Ge content x as a function of the [001] crystal growth direction z for two different Ge grading rates, LG 1.5% µm−1 (blue) and HG 6% µm−1 (green). (b) Cross-sectional geometry of the SiGe/Si crystal with L1 = 2 µm and a Ge grading rate of 1.5% µm−1 (LG2). The Si pillar is sketched in green, the 8 µm thick Si buffer profile in orange and the SiGe crystal profile in red. (c), (d) Cross-sectional geometries as in panel (b), but for L1 = 5 µm, LG5 in panel (c), and for a Ge grading rate of 6% µm−1, HG2 in panel (d). |
![[Figure 1]](rg5143fig1.jpg)
 | JOURNAL OF APPLIED CRYSTALLOGRAPHY |
ISSN: 1600-5767
