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![[Figure 6]](rg5143fig6mag.jpg)
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Figure 6
Schematic views of the origin of elongated SiGe diffraction maxima in three-dimensional RSMs for (a) 004 and (c) 115 reflections at the top of the crystal (LG2). The peak elongation is influenced by the convex bending of the crystal planes and by the size and position of the area irradiated by the X-ray beam. This area is different for the two diffraction geometries, (e) 004 and (g) 115. Position-sensitive (x, y) maps of the scattered intensity around the SiGe layer peak for (f) the 004 reflection and (h) the 115 reflection. They show the crystal shape projected along the X-ray beam direction for three particular (see the marked spots) positions: one in the middle of the 1 µm thick capping layer (Ge content 40%) and two at the sides of the Si-rich part. These positions correspond to the elongated SiGe diffraction peaks. For each position within the (x, y) map, the elongated diffraction peak may be represented by a curved line segment. The complete series of these segments forms a net through reciprocal space, (b) for 004 and (d) for 115. The region of line segments was cut at 4.61 Å−1 for 004 and at 5.77 Å−1 for 115 to allow easier numerical processing. |
![[Figure 6]](rg5143fig6.jpg)
 | JOURNAL OF APPLIED CRYSTALLOGRAPHY |
ISSN: 1600-5767
