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 | JOURNAL OF APPLIED CRYSTALLOGRAPHY |
Detailed surface analysis of V-defects in GaN films on patterned silicon(111) substrates by metal–organic chemical vapour deposition. Corrigendum
aNational Institute of LED on Silicon Substrate, Nanchang University, Nanchang, Jiangxi 330096, People's Republic of China
*Correspondence e-mail: zhangjianli@ncu.edu.cn
An error in the article by Gao, Zhang, Zhu, Wu, Mo, Pan, Liu & Jiang [J. Appl. Cryst. (2019), 52, 637–642] is corrected.
A label error has been found in Fig. 3(d) in the paper by Gao et al. (2019![[Gao, J.-D., Zhang, J.-L., Zhu, X., Wu, X.-M., Mo, C.-L., Pan, S., Liu, J.-L. & Jiang, F.-Y. (2019). J. Appl. Cryst. 52, 637-642.]](../../../../../../logos/arrows/j_arr.gif "Gao, J.-D., Zhang, J.-L., Zhu, X., Wu, X.-M., Mo, C.-L., Pan, S., Liu, J.-L. & Jiang, F.-Y. (2019). J. Appl. Cryst. 52, 637-642.")
). The error is that `Terrace High GR' should read `Terrace Low GR'. Here we publish the revised Fig. 3. This correction does not affect the text description in the paper.
![[Figure 3]](ei5053fig3thm.gif) | Figure 3 (Revised figure) Schematic representation of the growth mode of a V-defect. (a) Original state, (b) normal growth, (c) formation of the V-defect and (d) filling up of the V-defect. |
References
Gao, J.-D., Zhang, J.-L., Zhu, X., Wu, X.-M., Mo, C.-L., Pan, S., Liu, J.-L. & Jiang, F.-Y. (2019). J. Appl. Cryst. 52, 637–642. CrossRef CAS IUCr Journals Google Scholar
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