Detailed surface analysis of V-defects in GaN films on patterned silicon(111) substrates by metal–organic chemical vapour deposition. Corrigendum

Gao, J.-D.; Zhang, J.-L.; Zhu, X.; Wu, X.-M.; Mo, C.-L.; Pan, S.; Liu, J.-L.; Jiang, F.-Y.

doi:10.1107/S1600576720000163

Journal of Applied Crystallography Journal of Applied
Crystallography

IUCr IT WDC

home archive editors for authors for readers submit subscribe open access

view article

Figure 3
(Revised figure) Schematic representation of the growth mode of a V-defect. (a) Original state, (b) normal growth, (c) formation of the V-defect and (d) filling up of the V-defect.

JOURNAL OF
APPLIED
CRYSTALLOGRAPHY

ISSN: 1600-5767

Volume 53| Part 1| February 2020| Page 302

https://doi.org/10.1107/S1600576720000163

Follow J. Appl. Cryst.

Search IUCr Journals		doi		Advanced search
Author		volume	page