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Figure 1
Crystal preparation using a FIB. The prospective crystal for SC-XRD is marked in blue. (a) outlines the cube-shaped crystal which will be cut out from the wafer edge. In the first preparation step (b) two trenches (1) perpendicular to the edge at a distance of 50 µm were cut, and then a staircase-like cross section parallel to the edge (2). For the final cutting step on the opposite side, the crystal was rotated by 180° around the electron-beam axis (c) and tilted as far as possible (−10°) in the reverse direction (d). In this position another trench (3) was cut. (e) shows the final crystal fixed on an easily transferable tungsten tip of the micro-manipulator (marked in orange). The platinum patch on the crystal surface (marked in red) links the crystal and tip so that the crystal can now be removed from the bulk in situ under microscope control (f).

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 53| Part 3| June 2020| Pages 614-622
https://doi.org/10.1107/S1600576720003143
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