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Figure 4
Near-surface distribution of implanted gallium ions induced by FIB milling into an LiNbO3 crystal calculated with SRIM (Ziegler et al., 2010BB50) (acceleration voltage: 30 kV). (a) shows the lateral and depth gallium distribution with maximum penetration levels of <250 Å and <500 Å, respectively, according to an alignment of the ion beam perpendicular to the crystal surface. (b) represents the number of gallium ions distributed along the crystal depth. The red triangles mark the positions of the highest density of gallium ions.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 53| Part 3| June 2020| Pages 614-622
https://doi.org/10.1107/S1600576720003143
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