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Figure 1
(a) Lely-type growth setup used at Fraunhofer IISB for the current study, (b) as-grown crystal boule B, (c) triangular seed B1 used to grow boule B and (d) wafer B4 cut from boule B. The dotted triangle in (d) illustrates the border between material grown axially on top of the seed and the lateral expansion area. The solid line encloses the fractured piece of B4 after surface preparation steps used for characterization.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 53| Part 4| August 2020| Pages 1080-1086
https://doi.org/10.1107/S1600576720008961
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