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Figure 1
High-resolution TEM image of a 20 nm-thin, fully relaxed CME-grown Ge layer on an Si(001) substrate. The interfacial edge dislocations are marked by arrows and spaced equidistantly by 10 nm.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 53| Part 5| October 2020| Pages 1212-1216
https://doi.org/10.1107/S1600576720009255
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