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Figure 2
(a) The simulated electron diffraction pattern of La2(Ti2O7) oriented at [ [{\bar 21\bar 1} ]]. The inset is the enlarged zero-order Laue pattern. (b) The experimental electron diffraction pattern of single-crystal silicon oriented at [ [{\bar 33\bar 4} ]]. The high-order Laue ring is marked as a dashed ring, and the high-order Laue diffraction spot for reconstructing the reciprocal lattice is marked H, which is vector-shifted to C1 in the zero-order Laue pattern.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 55| Part 1| February 2022| Pages 204-210
https://doi.org/10.1107/S1600576721013212
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