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Figure 5
(a) RC of the 4H-SiC 0008 reflection: five diffraction conditions are marked. The difference between adjacent conditions is 2 µrad. (b) Images of the right-handed threading screw dislocation (first row) and the left-handed threading screw dislocation (second row) under conditions (1) to (5). The topographic image is on the left and the ray-tracing simulated image is on the right of each box.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 55| Part 3| June 2022| Pages 544-550
https://doi.org/10.1107/S1600576722004046
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