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Figure 12
(a) A perspective view of the 3D surface plot around the symmetric (004) diffraction peaks of the GaAs/Ge/Si sample in reciprocal space, reconstructed using the Radon transform from QxQz RSMs recorded under different azimuths φ. The projections on the [(Q^{\rm S}_{x} Q^{\rm S}_{y})], [(Q^{\rm S}_{y} Q_{z})] and [(Q^{\rm S}_{x} Q_{z})] planes show the intensity from different kinds of maxima integrated along Qz, [Q^{\rm S}_{x}] and [Q^{\rm S}_{y}], respectively. (b) A 3D sketch of the different intensity maxima originating from various strained parts of the GaAs/Ge microcrystal. Green and cyan: top GaAs peaks in the middle and on the edge. Red and magenta: top Ge layer peaks in the middle and on the edge. Blue and orange: peaks from Ge in walls or trenches at the sides. A solid black line outlining the perspective isolevel (green) surface plot in panel (a) has been drawn to illustrate better the shape of the 3D intensity signal.

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