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Figure 5
Laue diffraction on GaN embedded in an Si substrate. (a) Optical microscopy image of the scanned region (the white spot corresponds to the beam position), (b) recorded Laue image from the scanned region centre, (c) Laue image in scattering angle space (the spot size is proportional to the intensity), (d) NN indexing and classification of phases in a Laue image, (e) reconstructed IPF-Z map of highest matching score for GaN crystal in the scan region, and (f) ɛ33 (c axis of GaN) strain component.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 55| Part 4| August 2022| Pages 737-750
https://doi.org/10.1107/S1600576722004198
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