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Figure 3
White beam XRDI images taken as the power dissipated in the transistor is incrementally increased by decreasing the value of the resistor RL. (a) RL = 800 Ω 0.57 W (b) RL = 500 Ω 1.32 W, (c) RL = 300 Ω 1.82 W, (d) RL = 200 Ω 2.08 W, (e) RL = 100 Ω 2.32 W, (f) RL = 50 Ω 2.44 W; 220 reflection, X-ray wavelength 0.038 nm.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 55| Part 5| October 2022| Pages 1139-1146
https://doi.org/10.1107/S1600576722007142
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