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Figure 2
(a) An XRD reciprocal-space map in the vicinity of the GaN(0002) reflection, (b) a θ–2θ scan over a wide angular range, (c) a GID reciprocal-space map in the vicinity of the GaN([1 {\overline 1}00]) reflection and (d) intensity profiles through the GaN reflections from sample C. The colour-coded scale bars represent the intensity on the maps in counts, while the dashed lines show the θ–2θ radial scans across the Al2O3 substrate and the GaN NW reflections. The peaks along these lines in between the substrate and the NW reflections are due to different crystalline phases emerging because of interfacial reactions in the sputtered Ti film on the substrate. The reflections of various phases are indexed.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 56| Part 2| April 2023| Pages 439-448
https://doi.org/10.1107/S1600576723001486
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