Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties

Roder, M.; Steiner, J.; Wellmann, P.; Kabukcuoglu, M.; Hamann, E.; Haaga, S.; Hänschke, D.; Danilewsky, A.

doi:10.1107/S1600576723003291

Journal of Applied Crystallography Journal of Applied
Crystallography

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Figure 5
(a), (c), (e) 00012 topographic images of different HRXRD measurement positions with a high variety and density of dislocation arrangements. (b), (d), (f) Corresponding recorded RSMs exhibiting the same principle split into two diffracted intensity distributions, denoted as `M' and `S', despite different dislocation arrangements.

JOURNAL OF
APPLIED
CRYSTALLOGRAPHY

ISSN: 1600-5767

Volume 56| Part 3| June 2023| Pages 776-786

https://doi.org/10.1107/S1600576723003291

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