Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties

Roder, M.; Steiner, J.; Wellmann, P.; Kabukcuoglu, M.; Hamann, E.; Haaga, S.; Hänschke, D.; Danilewsky, A.

doi:10.1107/S1600576723003291

Journal of Applied Crystallography Journal of Applied
Crystallography

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Figure 6
RSM measurement at different rotations about the same sample surface point to align the preferential direction of SAGBs to 45°, parallel or perpendicular to the longitudinal extension of the HRXRD focal beam area. (a)–(c) 11 $[\bar 2]$ 0 transmission topographs showing a pronounced SAGB network. (d)–(f) Corresponding 00012 topographs at the same sample position and rotations revealing a high density of MPs besides the SAGB network. (g)–(j) RSMs recorded at different sample rotations demonstrating a change of the diffracted intensity distribution depending on the dislocations' orientation.

JOURNAL OF
APPLIED
CRYSTALLOGRAPHY

ISSN: 1600-5767

Volume 56| Part 3| June 2023| Pages 776-786

https://doi.org/10.1107/S1600576723003291

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