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![[Figure 4]](ge5137fig4mag.jpg)
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Figure 4
Schematic of potential parasitic background contributions and associated representative simulated 2D GISAXS patterns of (left to right) the sample, background contribution and their sum. The patterns are shown on a logarithmic intensity scale. The scattering events of interest are indicated by stars in the schematics. For illustrative purposes, the dimensions in the schematics are not drawn to scale. The sample is a bare substrate with the same parameters as for the construction of the model sample (Table S1). The same constant background Icbg = 1 was used. The horizon (exit angle αf = 0) is marked in the 2D GISAXS patterns by a horizontal dashed white line. (a) Parasitic direct beam scattering of nanopores with a radius of 3 nm. (b) Parasitic surface roughness scattering from the sample holder with σrms,holder = 5 nm, ξholder = 100 nm, Hholder = 0.5, δholder = 4.5 × 10−6 and βholder = 6 × 10−8. (c) Combined effect of the scenarios shown in (a) and (b). The positions of relevant linecuts to identify and adjust the background contributions are indicated with red dashed lines in the right-most patterns. All linecuts are shown in Fig. S3. |
![[Figure 4]](ge5137fig4.jpg)
 | JOURNAL OF APPLIED CRYSTALLOGRAPHY |
ISSN: 1600-5767
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