view article
Figure 5
Linecuts (a) III at qz = 1.01 nm−1 and (b) IV of the simulated 2D GISAXS pattern of the representative nanostructured thin film with noise (step 4, open black symbols) and of a simulation including only the substrate with the homogeneous film on top (step 2, blue lines). The vertical dashed lines in (b) indicate the critical angles of the film and of the substrate. The inset in (b) shows a close-up of the Yoneda band region from 0.2 to 0.4 nm−1. (c) Residual plot given by (Istep4 − Istep2)/Istep4. Horizontal and vertical dashed lines indicate the positions of linecuts III and IV, respectively.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 56| Part 5| October 2023| Pages 1330-1347
https://doi.org/10.1107/S1600576723006520
Follow J. Appl. Cryst.
Sign up for e-alerts
E-alerts
Follow J. Appl. Cryst. on Twitter
Twitter
Follow us on facebook
Facebook
Sign up for RSS feeds
RSS