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Figure 9
(a) Experimental (qy > 0) and simulated (qy < 0) 2D GISAXS pattern of a bare Si substrate at an incident angle of 0.22°. Dashed white lines indicate the positions of linecuts I–V. (b)–(f) Linecuts I–V of experiment (open symbols) and simulation (solid lines). The purple line is the best fit using a single substrate with low roughness. The blue line is the best fit including an incoherent addition of direct beam scattering of a spherical object. The red line is the best fit using the simulation setup as described in the text. In all three cases, a constant background is included. 2D patterns and residual plots of each case are shown in Fig. S7. In (f), the blue and red lines overlap.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 56| Part 5| October 2023| Pages 1330-1347
https://doi.org/10.1107/S1600576723006520
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