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Figure 2
(a) Back-reflection Laue image taken from an Si wafer. (b) Laue pattern simulated by assigning the G = 111 reflection to spot A. (c) A matching pattern simulated with 20° crystal rotation around G from panel (b), which determines the wafer surface to be (431). Image width 141 mm and imaging distance D = 36 mm. The white to red spot colors indicate weak to strong diffraction intensities.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 56| Part 5| October 2023| Pages 1610-1615
https://doi.org/10.1107/S1600576723007926
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