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Figure 2
Top: energy-dispersive X-ray topography of a 3 mm-thick GaAs crystal. The MAR area detector is positioned 6 m from the sample (see Fig. 1[link]). Exposure time 60 min. Bottom: intensity pattern between the two horizontal lines of Fig. 2[link] (top) projected downwards to create a line profile. It shows on the left the onset of the characteristic Kβ1 line and the characteristic Kβ2 line of the tungsten anode followed at higher energies by the intensity pattern of the crystal with Pendellösung oscillations.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 57| Part 5| October 2024| Pages 1282-1287
https://doi.org/10.1107/S1600576724007246
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