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![[Figure 1]](jl5094fig1mag.jpg)
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Figure 1
(a) XR and NR data fitted (curves) using (b) the five-layer SLD models (solid and dashed profiles) for the same N-1.5 film, including the surface sublayer and two main sublayers of the active layer sitting on a PEDOT:PSS conducting layer on the silicon substrate. Note that an additional thin SiOx sublayer of ca 2 nm thickness above the Si substrate is used in the NR data fitting (which might be produced by UV–ozone treatment on the Si substrate and is sensitive to NR due to its relatively high ρN value compared with the pure Si substrate); the ρx value of this SiOx sublayer is, however, very close to that of the Si substrate, and therefore the SiOx sublayer is neglected in the XR data fitting. (c) Corresponding data of the D-1.5 film are fitted using (d) the four-layer SLD models. The vertical dashed lines in (b) and (d) mark the interfaces between the PTB7–PC71BM blend layer and the PEDOT:PSS conducting layer. |
![[Figure 1]](jl5094fig1.jpg)
 | JOURNAL OF APPLIED CRYSTALLOGRAPHY |
ISSN: 1600-5767
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