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Figure 4
(a) The through-thickness C/S (or C1s/S2p) and dcSi/dN profiles deduced from XPS (in terms of sputter cycle N) for N-1.5, and (b) the corresponding data for the D-1.5 films. The dcSi/dN peak position corresponds to the interface between the PEDOT:PSS layer and the Si substrate. The big arrow in (a) marks the porosity effect on the non-trivial dcSi/dN values observed before reaching the PEDOT:PSS layer in the N-1.5 film. |
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