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Figure 3
Simulation of bright DMS lines in Si(001) using equation (2)[link]. (a) Lines with smooth contrast variation due to the presence of an isotropic intensity distribution around each reciprocal node. Simulation parameters: η1 = 1, η2 = 0 and N = 1000 in W(u) [equation (4)[link]]. Line indexing by klines (Penacchio et al., 2023BB38). (b) Lines with abrupt contrast variation due to an anisotropic intensity distribution around the reciprocal nodes. Simulation parameters: η1 = 0, η2 = 1, Nxy = 1000 and Nz = 100 in W(u), providing nodes elongated along the L reflection index (left inset, isosurface at 3% of the maximum). General simulation parameters: 8 keV σ-polarized X-rays, incidence direction with Φ0 = 0 and ω0 = 16.58° in the chosen reference frame (right-hand inset). Images are shown from the sample's perspective (Φ values increasing from right to left) and with a resolution of 0.04° (pixel size).

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 58| Part 3| June 2025| Pages 859-868
https://doi.org/10.1107/S1600576725003553
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