Lattice strain relaxation in thin Mo films grown heteroepitaxially on MgO single crystals

Cejpek, P.; Motylenko, M.; Rafaja, D.

doi:10.1107/S1600576726000233

Journal of Applied Crystallography Journal of Applied
Crystallography

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Figure 10
Dependence of the quadratic broadening of selected diffraction lines ( $[\beta^{2}]$ ) on the squared magnitude of the diffraction vector ( $[|{\bf q}|^{2} = 16\pi^{2}\sin^{2}\theta/\lambda^{2}]$ ) and on the inclination of the diffraction vector from the normal direction to the sample surface (χ) as measured for the Mo film deposited on the (011)-oriented MgO substrate. Symbols labelled by diffraction indices represent measured integral breadths. Solid and dashed lines show the corresponding fit using equations (9), (12) and (14). The dash–dotted lines at the bottom of the plots illustrate the strain contribution [equation (12)] to the XRD line broadening.

JOURNAL OF
APPLIED
CRYSTALLOGRAPHY

ISSN: 1600-5767

Volume 59| Part 1| February 2026| Pages 190-205

https://doi.org/10.1107/S1600576726000233

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