Lattice strain relaxation in thin Mo films grown heteroepitaxially on MgO single crystals

Cejpek, P.; Motylenko, M.; Rafaja, D.

doi:10.1107/S1600576726000233

Journal of Applied Crystallography Journal of Applied
Crystallography

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Figure 2
(a) Bright-field TEM image of the Mo film deposited on the (001)-oriented MgO substrate. The growth direction $[[001]_{\rm Mo}]$ is marked by the white arrow. The Pt cover layer stems from the FIB sample preparation. (b) SAED pattern obtained from the area marked by the large dashed circle in panel (a). Diffraction spots from the matrix are labelled in normal script and diffraction spots from the twins in italics. Non-indexed diffraction spots (two of them are highlighted by small dashed orange circles) correspond to double reflections. (c) CBED patterns measured at the positions marked as A, B, C and D in panel (a). The zone axes of the SAED and CBED patterns are [110] for both matrix and twins. (d) Dark-field image taken using the diffraction spots enclosed by the solid yellow circle in panel (b), i.e. $[\it {\bar{1}10_{\rm twin}}]$ and the double reflection from the matrix/twin interface that is located between the diffraction spots $[{\it\bar{1}10}_{\rm twin}]$ and $[\bar{1}10_{\rm matrix}]$ .

JOURNAL OF
APPLIED
CRYSTALLOGRAPHY

ISSN: 1600-5767

Volume 59| Part 1| February 2026| Pages 190-205

https://doi.org/10.1107/S1600576726000233

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