Lattice strain relaxation in thin Mo films grown heteroepitaxially on MgO single crystals

Cejpek, P.; Motylenko, M.; Rafaja, D.

doi:10.1107/S1600576726000233

Journal of Applied Crystallography Journal of Applied
Crystallography

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Figure 5
Dependence of the quadratic broadening of selected XRD lines ( $[\beta^{2}]$ ) on the squared magnitude of the diffraction vector ( $[|{\bf q}|^{2} = 16\pi^{2}\sin^{2}\theta/\lambda^{2}]$ ) and on its inclination from the normal direction to the sample surface (χ) as measured for the Mo film deposited on the (001)-oriented MgO substrate. Solid symbols labelled by diffraction indices show measured integral breadths; scattered lines with crosses stand for the corresponding fit (see text). The straight lines represent the strain contribution to the XRD line broadening in the matrix (bottom) and in the twins (middle).

JOURNAL OF
APPLIED
CRYSTALLOGRAPHY

ISSN: 1600-5767

Volume 59| Part 1| February 2026| Pages 190-205

https://doi.org/10.1107/S1600576726000233

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