Lattice strain relaxation in thin Mo films grown heteroepitaxially on MgO single crystals

Cejpek, P.; Motylenko, M.; Rafaja, D.

doi:10.1107/S1600576726000233

Journal of Applied Crystallography Journal of Applied
Crystallography

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Figure 9
Lattice parameters of the orientation variants from equations (15a), left panel, and (15b), right panel, in the Mo film deposited on the (011)-oriented MgO substrate. Measured lattice parameters are plotted by solid symbols. Lines with crosses represent the least-squares fit using equation (4), in which the stress components $[\sigma_{33}]$ and $[\sigma_{12}]$ were kept zero.

JOURNAL OF
APPLIED
CRYSTALLOGRAPHY

ISSN: 1600-5767

Volume 59| Part 1| February 2026| Pages 190-205

https://doi.org/10.1107/S1600576726000233

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