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![[Figure 1]](yr5161fig1mag.jpg)
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Figure 1
(a) Schematic ray diagram for acquiring SA-ECPs in Channeling mode in a TESCAN AMBER-X. The central point in the pattern lies on the optic axis of the microscope, where the beam is `un-rocked', and is termed the direct beam. (b) A 3D model view inside the scanning electron microscope chamber. Inset features a 4Q-BSE image of a Si sample showing the channeling pattern. The backside of the chamber is associated with the right edge of the micrograph. (c) Schematic of the generation of a 2D gnomonic projection from a 3D crystal sample, subtending a solid angle (2α), projected at a distance known as the detector distance (DD). (d) Schematic depiction of a stub-mounted specimen and its +/− sense of tilt and rotation directions. (e) Axis conventions and how the changes in stage configurations affect the channeling pattern. This experimental SA-ECP is captured in Channeling mode from a Si [001] single crystal featuring a 〈100〉 zone axis at the center. |
![[Figure 1]](yr5161fig1.jpg)
 | JOURNAL OF APPLIED CRYSTALLOGRAPHY |
ISSN: 1600-5767
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