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Figure 11
ECCI of threading dislocations in GaAs/Ge. (Left) Experimental and simulated SA-ECPs of GaAs, with the inset showing the direct beam positions 1–9 and selected diffraction conditions obtained by tilting the sample in a small circle of radius 0.5° around position 1, annotated as a + symbol. (Right) Mosaic of BSE ECCI micrographs acquired corresponding to channeling conditions 1–9. The micrographs 2–9 in the mosaic correspond to a 0.5° offset in gnomonic pattern relative to position 1. The micrographs show three distinct dislocations with their contrast changing significantly with the slight change in [uvw], affirming that even a small (∼0.5°) deviation from the exact channeling orientation strongly alters the observed defect contrast.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 59| Part 2| April 2026| Pages 530-551
https://doi.org/10.1107/S1600576726000567
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