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Figure 4
Verification of the relationship between WD and effective DD for the formation of SA-ECPs within the scanning electron microscope. (a) The measured relationship between WD, DD and 2α, where the 95% confidence bounds of the regression fit are overlaid on the plots (shaded regions) to illustrate the precision of this calibration and the coefficients are given in the table. (b) A representative experimental SA-ECP of Si with the normalized pattern width of 1 × 1 and a ray-tracing schematic depicting the geometrical relationship between DD, the beam origin and the subtended angle 2α.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 59| Part 2| April 2026| Pages 530-551
https://doi.org/10.1107/S1600576726000567
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