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Figure 7
Comparative analysis of misorientation correlation between ECCI and EBSD for a tri-crystal silicon sample. The six-column grid displays (1) experimental EBSPs, (2) indexed EBSPs, (3) experimental SA-ECPs, (4) indexed SA-ECPs, (5) predicted SA-ECPs for crystals 1 and 2 with respect to the reference, and (6) difference plots between simulated and predicted SA-ECPs. The observed discrepancies in the actual and predicted SA-ECPs highlight the limitations of the EBSD-informed controlled-ECCI method for high-precision orientation alignment.

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