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Figure 1
Diffraction patterns of samples with the overall chemical composition Ti0.53Al0.47N, which were deposited at UB = −40 (bottom), −80 (middle) and −120 V (top). Vertical solid lines mark positions of the diffraction lines from the oversaturated fcc-(Ti,Al)N (in the lower part of the figure) and from Ti-rich and Al-rich fcc-(Ti,Al)N (in the upper part of the figure). The dotted lines mark positions of the diffraction lines from hex-WC, which is the main constituent of the substrate. The bars at the bottom of the figure show the positions of strong diffraction lines from w-(Al,Ti)N as calculated using the lattice parameters aw = 3.11197 (2) and cw = 4.98089 (4) Å from Paszkowicz et al. (2004BB21).

IUCrJ
Volume 1| Part 6| October 2014| Pages 446-456
ISSN: 2052-2525
doi:10.1107/S2052252514021484