view article
Figure 4
Flat-field images of high-Z sensors bump-bonded to 3 × 2 Medipix3 readout chips, taken using an X-ray source at 40 keV with an Mo target for sensors of (a) CdTe and (b) GaAs (Pennicard, Smoljanin et al., 2014BB55). The scales indicate the relative gain. (c) An image of a Ge sensor bump-bonded to a Medipix3 readout chip, taken using an X-ray source at 40 keV with an Ag target (Pennicard, Struth et al., 2014BB56). (Copyright SISSA Medialab Srl. Reproduced by permission of IOP Publishing. All rights reserved.)

IUCrJ
Volume 2| Part 3| April 2015| Pages 371-383
ISSN: 2052-2525
doi:10.1107/S205225251500010X