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Figure 4
(Top) Local disruption of the dopant distribution in a Ge(Ga) single crystal under variation of the growth-axis orientation relative to the force of gravity. The rotational velocity is ∼10 arcminutes s−1. The structural response of the crystal to the melt disturbance caused by varying the setup orientation is revealed on the topograph by a black growth striatum (marked by an arrow). The image is a double-crystal plane wave X-ray topograph (Cu Kα1 radiation, 511 reflection, ωB diffraction geometry). (Bottom) The angular position of the sample during exposure (working point) is indicated by a dot.

IUCrJ
Volume 3| Part 3| May 2016| Pages 200-210
ISSN: 2052-2525
doi:10.1107/S2052252516003730