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Figure 5
Structural features of a GaSb(Si) crystal grown by the Czochralski method (seed, on the left) and partially regrown by the vertical Bridgman method (on the right). The image is an X-ray topograph using the AXRT method, with Mo Kα1 radiation and the symmetric [{\overline 2}20] reflection. The white arrows indicate areas with different dopant states.

IUCrJ
Volume 3| Part 3| May 2016| Pages 200-210
ISSN: 2052-2525
doi:10.1107/S2052252516003730