Investigation of growth characteristics and semimetal–semiconductor transition of polycrystalline bis­muth thin films

Wang, N.; Dai, Y.-X.; Wang, T.-L.; Yang, H.-Z.; Qi, Y.

doi:10.1107/S2052252519015458

Figure 6
XRD patterns of Bi thin films with various thicknesses. The thicknesses are 19, 24, 29, 33, 39, 77, 116 and 193 nm (the growth rate is 1.61 Å min⁻¹, the substrate temperature is 70°C and T_s/T_m = 0.63).

IUCrJ

Volume 7| Part 1| January 2020| Pages 49-57

ISSN: 2052-2525

https://doi.org/10.1107/S2052252519015458

CHEMISTRY | CRYSTENG

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