General method to calculate the elastic deformation and X-ray diffraction properties of bent crystal wafers

Honkanen, A.-P.; Huotari, S.

doi:10.1107/S2052252520014165

Figure 11
(Left panel) Resolution curves of the Si(555) strip-bent analyser with various strip widths compared with the pure bending Takagi–Taupin (TT) solution. The diameter of the analyser was set to 100 mm, the bending radius to 0.5 m and the wafer thickness to 150 µm. The Bragg angle was chosen to be 88.5° and the Johann error was neglected. (Right panel) Standard deviations/central limit theorem FWHMs of the resolution curves compared with the prediction based on the expression $[\left({\sigma _{0}^{2}+\sigma^{2}} \right)^{1/2}]$ , where σ₀ is the standard deviation of the pure bending TT-solution and σ is calculated from the isotropic rectangular wafer model [equation (54