General method to calculate the elastic deformation and X-ray diffraction properties of bent crystal wafers

Honkanen, A.-P.; Huotari, S.

doi:10.1107/S2052252520014165

Figure 12
Typical focal spot of a circular Si(660) SBCA with a bending radius of 1 m and diameter of 100 mm measured in near-backscattering conditions with a position sensitive detector as a function of photon energy. The pixel size is 55 µm and the colour represents the recorded photon counts on the logarithmic scale. In the top figure the detector was positioned at the focal spot of the SBCA and in the bottom figure it was moved out of focus, effectively mapping the diffracted intensity as a function of surface. The figure is a previously unpublished image from the experimental dataset used in our previous work (Honkanen et al., 2014b